transistors 1 publication date: january 2003 sjc00282bed 2SC4691J silicon npn epitaxial planar type for high-speed switching features ? low collector-emitter saturation voltage v ce(sat) ? ss-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 40 v, i e = 0 0.1 a emitter-base cutoff current (collector open) i ebo v eb = 4 v, i c = 0 0.1 a forward current transfer ratio * h fe v ce = 1 v, i c = 10 ma 60 200 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.17 0.25 v base-emitter saturation voltage v be(sat) i c = 10 ma, i b = 1 ma 1.0 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 450 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 2 6 pf (common base, input open circuited) turn-on time t on refer to the measurement circuit 17 ns turn-off time t off 17 ns storage time t stg 10 ns electrical characteristics t a = 25 c 3 c unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 40 v collector-emitter voltage (e-b short) v ces 40 v emitter-base voltage (collector open) v ebo 5v collector current i c 100 ma peak collector current i cp 300 ma collector power dissipation p c 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c marking symbol: 2y note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q r no-rank h fe 60 to 120 90 to 200 60 to 200 product of no-rank is not classified and have no indication for rank. 0.27 0.02 3 12 0.12 +0.03 ?0.01 0.80 0.05 (0.80) 0.85 1.60 0.05 0 to 0.02 0.10 max. 0.70 +0.05 ?0.03 (0.375) 5? 5? 1.60 +0.05 ?0.03 1.00 0.05 (0.50)(0.50) +0.05 ?0.03 1: base 2: emitter 3: collector eiaj: sc-89 ssmini3-f1 package
2SC4691J 2 sjc00282bed v be(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c 220 ? 0.1 f 50 ? v cc = 3 v v out 3.3 k ? 50 ? v in = 10 v 3.3 k ? v bb = ? 3 v v in v out t on 90% 10% 90% 10% t off (waveform at a) v in v out 10% 10% t stg 910 ? 0.1 f 0.1 f a 90 ? v cc = 10 v v out 500 ? 50 ? v in = 10 v 500 ? 1 k ? v bb = 2 v t on , t off test circuit t stg test circuit measurement circuit 0 150 125 100 25 75 50 0 150 125 100 75 50 25 ambient temperature t a ( c ) collector power dissipation p c ( mw ) 06 5 4 13 2 0 250 200 150 100 50 t a = 25 c i b = 8 ma 7 ma 6 ma 5 ma 4 ma 3 ma 2 ma 1 ma collector-emitter voltage v ce ( v ) collector current i c (m a ) 0.1 1 10 100 1 000 0.01 1 0.1 i c / i b = 10 t a = 75 c 25 c ? 25 c collector current i c ( ma ) collector-emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.1 10 1 i c / i b = 10 t a = 75 c 25 c ? 25 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 1 000 0 160 120 40 100 140 80 20 60 v ce = 1 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 0 5 15 20 25 30 10 35 0.1 100 10 1 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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